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SUD80460E-GE3

MOSFET N-CH 150V 42A TO252AA


  • Manufacturer: Vishay Siliconix
  • Origchip NO: 880-SUD80460E-GE3
  • Package: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Datasheet: PDF
  • Stock: 571
  • Description: MOSFET N-CH 150V 42A TO252AA (Kg)

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Details

Tags

Parameters
Factory Lead Time 14 Weeks
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Surface Mount YES
Transistor Element Material SILICON
Operating Temperature -55°C~175°C TJ
Packaging Tube
Series ThunderFET®
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Terminal Form GULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-PSSO-G2
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Number of Channels 1
Power Dissipation-Max 65.2W Tc
Operating Mode ENHANCEMENT MODE
Power Dissipation 65.2W
Case Connection DRAIN
Turn On Delay Time 8 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 44.7m Ω @ 8.3A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 560pF @ 50V
Current - Continuous Drain (Id) @ 25°C 42A Tc
Gate Charge (Qg) (Max) @ Vgs 16nC @ 10V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Turn-Off Delay Time 15 ns
Continuous Drain Current (ID) 42A
Gate to Source Voltage (Vgs) 20V
Drain-source On Resistance-Max 0.0447Ohm
Drain to Source Breakdown Voltage 150V
Pulsed Drain Current-Max (IDM) 40A
Max Junction Temperature (Tj) 175°C
Height 2.507mm
RoHS Status ROHS3 Compliant
See Relate Datesheet