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VS-GA200SA60SP

VISHAY VS-GA200SA60SP IGBT Single Transistor, 200 A, 1.1 V, 630 W, 600 V, ISOTOP, 4


  • Manufacturer: Vishay Semiconductor Diodes Division
  • Origchip NO: 884-VS-GA200SA60SP
  • Package: SOT-227-4, miniBLOC
  • Datasheet: PDF
  • Stock: 108
  • Description: VISHAY VS-GA200SA60SP IGBT Single Transistor, 200 A, 1.1 V, 630 W, 600 V, ISOTOP, 4 (Kg)

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Details

Tags

Parameters
Mount Chassis Mount, Screw
Mounting Type Chassis Mount
Package / Case SOT-227-4, miniBLOC
Number of Pins 4
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Published 2000
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 4
ECCN Code EAR99
Additional Feature UL APPROVED
Max Power Dissipation 630W
Terminal Position UPPER
Terminal Form UNSPECIFIED
Number of Elements 1
Configuration Single
Power Dissipation 630W
Case Connection ISOLATED
Power - Max 781W
Transistor Application POWER CONTROL
Rise Time 60ns
Polarity/Channel Type N-CHANNEL
Input Standard
Collector Emitter Voltage (VCEO) 600V
Max Collector Current 342A
Current - Collector Cutoff (Max) 1mA
Collector Emitter Breakdown Voltage 600V
Collector Emitter Saturation Voltage 1.1V
Input Capacitance 16.25nF
Turn On Time 132 ns
Vce(on) (Max) @ Vge, Ic 1.3V @ 15V, 100A
Turn Off Time-Nom (toff) 2160 ns
NTC Thermistor No
Input Capacitance (Cies) @ Vce 16.25nF @ 30V
REACH SVHC Unknown
RoHS Status ROHS3 Compliant
See Relate Datesheet