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VS-GB100TH120N

IGBT 1200V 200A 833W INT-A-PAK


  • Manufacturer: Vishay Semiconductor Diodes Division
  • Origchip NO: 884-VS-GB100TH120N
  • Package: Double INT-A-PAK (3 + 4)
  • Datasheet: -
  • Stock: 891
  • Description: IGBT 1200V 200A 833W INT-A-PAK (Kg)

Purchase & Inquiry

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Purchase

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Means of Payment

For your convenience, we accept multiple payment methods in USD, including PayPal, Credit Card, and wire transfer.

RFQ (Request for Quotations)

It is recommended to request for quotations to get the latest prices and inventories about the part.
Our sales will reply to your request by email within 24 hours.

IMPORTANT NOTICE

1. You'll receive an order information email in your inbox. (Please remember to check the spam folder if you didn't hear from us).
2. Since inventories and prices may fluctuate to some extent, the sales manager is going to reconfirm the order and let you know if there are any updates.

Shipping Cost

Shipping starts at $40, but some countries will exceed $40. For example (South Africa, Brazil, India, Pakistan, Israel, etc.)
The basic freight (for package ≤0.5kg or corresponding volume) depends on the time zone and country.

Shipping Method

Currently, our products are shipped through DHL, FedEx, SF, and UPS.

Delivery Time

Once the goods are shipped, estimated delivery time depends on the shipping methods you chose:

FedEx International, 5-7 business days.

The following are some common countries' logistic time.
transport

Details

Tags

Parameters
Factory Lead Time 14 Weeks
Mount Chassis Mount
Mounting Type Chassis Mount
Package / Case Double INT-A-PAK (3 + 4)
Operating Temperature 150°C TJ
Published 2015
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Subcategory Insulated Gate BIP Transistors
Max Power Dissipation 833W
Number of Elements 1
Configuration Half Bridge
Power - Max 833W
Input Standard
Collector Emitter Voltage (VCEO) 2.35V
Max Collector Current 200A
Current - Collector Cutoff (Max) 5mA
Collector Emitter Breakdown Voltage 1.2kV
Voltage - Collector Emitter Breakdown (Max) 1200V
Input Capacitance 8.58nF
Vce(on) (Max) @ Vge, Ic 2.35V @ 15V, 100A
NTC Thermistor No
Gate-Emitter Voltage-Max 20V
Input Capacitance (Cies) @ Vce 8.58nF @ 25V
RoHS Status ROHS3 Compliant
See Relate Datesheet