Introducing the BLF188XR, a high-power RF transistor designed for ruggedness and reliability in demanding applications. This LDMOS transistor offers outstanding performance with a frequency range of 470-860 MHz and a peak output power of 1.2 kW. The BLF188XR is ideal for use in high-power broadcast, industrial, and scientific applications, where a robust and efficient amplifier solution is required. With its advanced design and high thermal stability, the BLF188XR ensures excellent linearity and efficiency, making it suitable for both analog and digital modulation schemes. Its innovative features include an integrated ESD protection diode, enhanced gate oxide ruggedness, and gold metallization for improved reliability and performance. Whether used in FM radio transmitters, television broadcast systems, or industrial RF heating applications, the BLF188XR provides a cost-effective and high-performance solution for high-power RF amplification needs. With its state-of-the-art technology and proven track record of reliability, the BLF188XR sets the standard for high-power LDMOS transistors.
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