mmbfj113

Introducing the MMBFJ113, a versatile and high-performance N-channel field-effect transistor (FET) designed for a wide range of electronic applications. With a maximum drain-source voltage of 40V and a continuous drain current of 225mA, the MMBFJ113 is suitable for use in power management, signal amplification, switching, and other electronic circuits. This transistor features a low threshold voltage and low on-state resistance, making it ideal for low-power applications where efficiency and precision are essential. The compact SOT-23 package ensures easy integration into a variety of circuit designs, while its high reliability and robust construction guarantee long-term performance and durability. Whether you are a hobbyist, student, or professional electronics engineer, the MMBFJ113 offers a cost-effective and reliable solution for your semiconductor needs. With its high performance, versatility, and compact design, the MMBFJ113 is the perfect choice for your next electronic project.