All Products

2SC5084-O(TE85L,F)

Bipolar Transistors - BJT Radio-Freq Bipolar 80mA 150mW 12V


  • Manufacturer: Toshiba Semiconductor and Storage
  • Origchip NO: 830-2SC5084-O(TE85L,F)
  • Package: TO-236-3, SC-59, SOT-23-3
  • Datasheet: -
  • Stock: 556
  • Description: Bipolar Transistors - BJT Radio-Freq Bipolar 80mA 150mW 12V (Kg)

Purchase & Inquiry

Transport

Purchase

You may place an order without registering to Utmel.
We strongly suggest you sign in before purchasing as you can track your order in real time.

Means of Payment

For your convenience, we accept multiple payment methods in USD, including PayPal, Credit Card, and wire transfer.

RFQ (Request for Quotations)

It is recommended to request for quotations to get the latest prices and inventories about the part.
Our sales will reply to your request by email within 24 hours.

IMPORTANT NOTICE

1. You'll receive an order information email in your inbox. (Please remember to check the spam folder if you didn't hear from us).
2. Since inventories and prices may fluctuate to some extent, the sales manager is going to reconfirm the order and let you know if there are any updates.

Shipping Cost

Shipping starts at $40, but some countries will exceed $40. For example (South Africa, Brazil, India, Pakistan, Israel, etc.)
The basic freight (for package ≤0.5kg or corresponding volume) depends on the time zone and country.

Shipping Method

Currently, our products are shipped through DHL, FedEx, SF, and UPS.

Delivery Time

Once the goods are shipped, estimated delivery time depends on the shipping methods you chose:

FedEx International, 5-7 business days.

The following are some common countries' logistic time.
transport

Details

Tags

Parameters
Factory Lead Time 12 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Transistor Element Material SILICON
Operating Temperature 125°C TJ
Packaging Cut Tape (CT)
Published 2014
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Additional Feature LOW NOISE
Subcategory Other Transistors
Max Power Dissipation 150mW
Terminal Position DUAL
Terminal Form GULL WING
Reach Compliance Code unknown
JESD-30 Code R-PDSO-G3
Number of Elements 1
Element Configuration Single
Power - Max 150mW
Transistor Application AMPLIFIER
Gain Bandwidth Product 7 GHz
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 12V
Max Collector Current 80mA
DC Current Gain (hFE) (Min) @ Ic, Vce 80 @ 20mA 10V
Collector Emitter Breakdown Voltage 12V
Gain 11dB
Transition Frequency 7000MHz
Max Breakdown Voltage 12V
Collector Base Voltage (VCBO) 20V
Emitter Base Voltage (VEBO) 3V
hFE Min 80
Highest Frequency Band ULTRA HIGH FREQUENCY B
Collector-Base Capacitance-Max 1.15pF
Noise Figure (dB Typ @ f) 1.1dB @ 1GHz
RoHS Status RoHS Compliant
See Relate Datesheet