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3LN01C-TB-E

MOSFET N-CH 30V 150MA 3CP


  • Manufacturer: ON Semiconductor
  • Origchip NO: 598-3LN01C-TB-E
  • Package: TO-236-3, SC-59, SOT-23-3
  • Datasheet: PDF
  • Stock: 699
  • Description: MOSFET N-CH 30V 150MA 3CP (Kg)

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FedEx International, 5-7 business days.

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Details

Tags

Parameters
Lifecycle Status LAST SHIPMENTS (Last Updated: 1 day ago)
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Surface Mount YES
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Published 2006
JESD-609 Code e6
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin/Bismuth (Sn/Bi)
HTS Code 8541.21.00.95
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 40
Pin Count 3
Number of Elements 1
Power Dissipation-Max 250mW Ta
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 250mW
Turn On Delay Time 19 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 3.7 Ω @ 80mA, 4V
Input Capacitance (Ciss) (Max) @ Vds 7pF @ 10V
Current - Continuous Drain (Id) @ 25°C 150mA Ta
Gate Charge (Qg) (Max) @ Vgs 1.58nC @ 10V
Rise Time 65ns
Drain to Source Voltage (Vdss) 30V
Drive Voltage (Max Rds On,Min Rds On) 1.5V 4V
Vgs (Max) ±10V
Fall Time (Typ) 120 ns
Turn-Off Delay Time 155 ns
Continuous Drain Current (ID) 150mA
Gate to Source Voltage (Vgs) 10V
Drain Current-Max (Abs) (ID) 0.15A
Height 1.1mm
Length 2.9mm
Width 1.5mm
RoHS Status RoHS Compliant
Lead Free Lead Free
See Relate Datesheet