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BLF4G10LS-120,112
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The following are some common countries' logistic time.
| Parameters | |
|---|---|
| Package / Case | SOT-502B |
| Surface Mount | YES |
| Transistor Element Material | SILICON |
| Packaging | Tray |
| Published | 2001 |
| JESD-609 Code | e3 |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 2 |
| ECCN Code | EAR99 |
| Terminal Finish | TIN |
| Voltage - Rated | 65V |
| Subcategory | FET General Purpose Power |
| Current Rating (Amps) | 12A |
| Terminal Position | DUAL |
| Terminal Form | FLAT |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Frequency | 920MHz~960MHz |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| Pin Count | 2 |
| JESD-30 Code | R-CDFP-F2 |
| Qualification Status | Not Qualified |
| Operating Temperature (Max) | 150°C |
| Number of Elements | 1 |
| Configuration | SINGLE |
| Operating Mode | ENHANCEMENT MODE |
| Case Connection | SOURCE |
| Current - Test | 650mA |
| Transistor Application | AMPLIFIER |
| Polarity/Channel Type | N-CHANNEL |
| Transistor Type | LDMOS |
| Gain | 19dB |
| Drain Current-Max (Abs) (ID) | 12A |
| DS Breakdown Voltage-Min | 65V |
| Power - Output | 48W |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| Voltage - Test | 28V |
| RoHS Status | ROHS3 Compliant |
See Relate Datesheet