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BU406G

BU406G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi


  • Manufacturer: ON Semiconductor
  • Origchip NO: 598-BU406G
  • Package: TO-220-3
  • Datasheet: PDF
  • Stock: 644
  • Description: BU406G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi (Kg)

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Details

Tags

Parameters
Factory Lead Time 6 Weeks
Lifecycle Status ACTIVE (Last Updated: 1 week ago)
Contact Plating Tin
Mounting Type Through Hole
Package / Case TO-220-3
Number of Pins 3
Supplier Device Package TO-220AB
Weight 4.535924g
Operating Temperature -65°C~150°C TJ
Packaging Tube
Published 1993
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature 150°C
Min Operating Temperature -65°C
Voltage - Rated DC 200V
Max Power Dissipation 60W
Current Rating 7A
Frequency 10MHz
Base Part Number BU406
Number of Elements 1
Polarity NPN
Element Configuration Single
Power Dissipation 60W
Power - Max 60W
Gain Bandwidth Product 10MHz
Transistor Type NPN
Collector Emitter Voltage (VCEO) 200V
Max Collector Current 7A
Current - Collector Cutoff (Max) 5mA
Vce Saturation (Max) @ Ib, Ic 1V @ 500mA, 5A
Collector Emitter Breakdown Voltage 200V
Voltage - Collector Emitter Breakdown (Max) 200V
Current - Collector (Ic) (Max) 7A
Max Frequency 10MHz
Collector Emitter Saturation Voltage 1V
Frequency - Transition 10MHz
Collector Base Voltage (VCBO) 400V
Emitter Base Voltage (VEBO) 6V
Height 6.35mm
Length 31.75mm
Width 12.7mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
See Relate Datesheet