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DMG3401LSN-7

MOSFET P-CH 30V 3A SC59


  • Manufacturer: Diodes Incorporated
  • Origchip NO: 233-DMG3401LSN-7
  • Package: TO-236-3, SC-59, SOT-23-3
  • Datasheet: PDF
  • Stock: 791
  • Description: MOSFET P-CH 30V 3A SC59 (Kg)

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Details

Tags

Parameters
Factory Lead Time 15 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Number of Pins 3
Weight 7.994566mg
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Digi-Reel®
Published 2012
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Additional Feature HIGH RELIABILITY
Subcategory Other Transistors
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 30
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 800mW Ta
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 1.2W
Turn On Delay Time 8 ns
FET Type P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 50m Ω @ 4A, 10V
Vgs(th) (Max) @ Id 1.3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1326pF @ 15V
Current - Continuous Drain (Id) @ 25°C 3A Ta
Gate Charge (Qg) (Max) @ Vgs 25.1nC @ 10V
Rise Time 13ns
Drive Voltage (Max Rds On,Min Rds On) 2.5V 10V
Vgs (Max) ±12V
Fall Time (Typ) 38 ns
Turn-Off Delay Time 71 ns
Continuous Drain Current (ID) 3A
Gate to Source Voltage (Vgs) 12V
Drain Current-Max (Abs) (ID) 3A
Drain-source On Resistance-Max 0.05Ohm
Drain to Source Breakdown Voltage 30V
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
See Relate Datesheet