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DMG4496SSS-13

N-Channel Enhancement Mode MOSFET SOIC8


  • Manufacturer: Diodes Incorporated
  • Origchip NO: 233-DMG4496SSS-13
  • Package: 8-SOIC (0.154, 3.90mm Width)
  • Datasheet: PDF
  • Stock: 332
  • Description: N-Channel Enhancement Mode MOSFET SOIC8 (Kg)

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Details

Tags

Parameters
Factory Lead Time 16 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154, 3.90mm Width)
Number of Pins 8
Weight 73.992255mg
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Digi-Reel®
Published 2013
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 8
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Subcategory FET General Purpose Powers
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 40
Pin Count 8
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 1.42W Ta
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 1.42W
Turn On Delay Time 4.76 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 21.5m Ω @ 10A, 10V
Vgs(th) (Max) @ Id 2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 493.5pF @ 15V
Current - Continuous Drain (Id) @ 25°C 10A Ta
Gate Charge (Qg) (Max) @ Vgs 10.2nC @ 10V
Rise Time 3.64ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±25V
Fall Time (Typ) 4.9 ns
Turn-Off Delay Time 19.5 ns
Continuous Drain Current (ID) 10A
Gate to Source Voltage (Vgs) 25V
Drain to Source Breakdown Voltage 30V
Pulsed Drain Current-Max (IDM) 60A
Height 1.5mm
Length 4.95mm
Width 3.95mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
See Relate Datesheet