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  • DMN10H099SFG-7

DMN10H099SFG-7

MOSFET 100V N-Ch Enh Mode 1127pF 25.2nC


  • Manufacturer: Diodes Incorporated
  • Origchip NO: 233-DMN10H099SFG-7
  • Package: 8-PowerVDFN
  • Datasheet: PDF
  • Stock: 167
  • Description: MOSFET 100V N-Ch Enh Mode 1127pF 25.2nC (Kg)

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FedEx International, 5-7 business days.

The following are some common countries' logistic time.
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Details

Tags

Parameters
Factory Lead Time 23 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-PowerVDFN
Number of Pins 8
Weight 72.007789mg
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2014
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Capacitance 1.127nF
Technology MOSFET (Metal Oxide)
Number of Channels 1
Power Dissipation-Max 980mW Ta
Turn On Delay Time 5.4 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 80m Ω @ 3.3A, 10V
Vgs(th) (Max) @ Id 3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1172pF @ 50V
Current - Continuous Drain (Id) @ 25°C 4.2A Ta
Gate Charge (Qg) (Max) @ Vgs 25.2nC @ 10V
Rise Time 5.9ns
Drive Voltage (Max Rds On,Min Rds On) 6V 10V
Vgs (Max) ±20V
Fall Time (Typ) 7.3 ns
Turn-Off Delay Time 20 ns
Continuous Drain Current (ID) 4.2A
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 100V
RoHS Status ROHS3 Compliant
See Relate Datesheet