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  • DMN2011UFDE-7

DMN2011UFDE-7

MOSFET N-CH 20V 11.7A UDFN2020-6


  • Manufacturer: Diodes Incorporated
  • Origchip NO: 233-DMN2011UFDE-7
  • Package: 6-UDFN Exposed Pad
  • Datasheet: PDF
  • Stock: 463
  • Description: MOSFET N-CH 20V 11.7A UDFN2020-6 (Kg)

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Details

Tags

Parameters
Vgs(th) (Max) @ Id 1V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 2248pF @ 10V
Current - Continuous Drain (Id) @ 25°C 11.7A Ta
Gate Charge (Qg) (Max) @ Vgs 56nC @ 10V
Rise Time 2.6ns
Drain to Source Voltage (Vdss) 20V
Drive Voltage (Max Rds On,Min Rds On) 1.5V 4.5V
Vgs (Max) ±12V
Fall Time (Typ) 13.5 ns
Factory Lead Time 23 Weeks
Turn-Off Delay Time 21.6 ns
Continuous Drain Current (ID) 11.7A
Mount Surface Mount
Gate to Source Voltage (Vgs) 12V
Mounting Type Surface Mount
RoHS Status ROHS3 Compliant
Package / Case 6-UDFN Exposed Pad
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2014
JESD-609 Code e4
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Terminal Finish Nickel/Palladium/Gold (Ni/Pd/Au)
Technology MOSFET (Metal Oxide)
Base Part Number DMN2011
Number of Channels 1
Power Dissipation-Max 610mW Ta
Element Configuration Single
Turn On Delay Time 3.6 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 9.5m Ω @ 7A, 4.5V
See Relate Datesheet