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DMN2075UDW-7

DMN2075 Series 20 V 2.8 A SMT N-Channel Enhancement Mode Mosfet - SOT-363


  • Manufacturer: Diodes Incorporated
  • Origchip NO: 233-DMN2075UDW-7
  • Package: 6-TSSOP, SC-88, SOT-363
  • Datasheet: PDF
  • Stock: 894
  • Description: DMN2075 Series 20 V 2.8 A SMT N-Channel Enhancement Mode Mosfet - SOT-363 (Kg)

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Details

Tags

Parameters
Factory Lead Time 40 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 6-TSSOP, SC-88, SOT-363
Number of Pins 6
Weight 6.010099mg
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2009
JESD-609 Code e3
Pbfree Code yes
Part Status Not For New Designs
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Additional Feature HIGH RELIABILITY
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 40
Pin Count 6
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 500mW Ta
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Turn On Delay Time 7.4 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 48m Ω @ 3A, 4.5V
Vgs(th) (Max) @ Id 1V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 594.3pF @ 10V
Current - Continuous Drain (Id) @ 25°C 2.8A Ta
Gate Charge (Qg) (Max) @ Vgs 7nC @ 4.5V
Rise Time 9.8ns
Drive Voltage (Max Rds On,Min Rds On) 1.5V 4.5V
Vgs (Max) ±8V
Fall Time (Typ) 6.7 ns
Turn-Off Delay Time 28.1 ns
Continuous Drain Current (ID) 2.8A
Gate to Source Voltage (Vgs) 8V
Drain-source On Resistance-Max 0.048Ohm
Drain to Source Breakdown Voltage 20V
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
See Relate Datesheet