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  • DMN2112SN-7

DMN2112SN-7

Single N-Channel 20 V 0.25 Ohm 500 mW Silicon Surface Mount Mosfet - SOT-23


  • Manufacturer: Diodes Incorporated
  • Origchip NO: 233-DMN2112SN-7
  • Package: TO-236-3, SC-59, SOT-23-3
  • Datasheet: PDF
  • Stock: 967
  • Description: Single N-Channel 20 V 0.25 Ohm 500 mW Silicon Surface Mount Mosfet - SOT-23 (Kg)

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Details

Tags

Parameters
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 100m Ω @ 500mA, 4.5V
Vgs(th) (Max) @ Id 1.2V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 220pF @ 10V
Current - Continuous Drain (Id) @ 25°C 1.2A Ta
Rise Time 15ns
Drive Voltage (Max Rds On,Min Rds On) 1.5V 4.5V
Vgs (Max) ±8V
Fall Time (Typ) 65 ns
Turn-Off Delay Time 75 ns
Continuous Drain Current (ID) 1.2A
Threshold Voltage 1.2V
Gate to Source Voltage (Vgs) 8V
Drain-source On Resistance-Max 0.25Ohm
Drain to Source Breakdown Voltage 20V
Dual Supply Voltage 20V
Nominal Vgs 1.2 V
Height 1.3mm
Length 3.1mm
Width 1.7mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Factory Lead Time 19 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Number of Pins 3
Weight 7.994566mg
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2014
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Termination SMD/SMT
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Additional Feature HIGH RELIABILITY
Subcategory FET General Purpose Powers
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 40
Pin Count 3
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 500mW Ta
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 500mW
Turn On Delay Time 10 ns
FET Type N-Channel
See Relate Datesheet