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  • DMN2400UFB-7

DMN2400UFB-7

MOSFET N-CH 20V 750MA 3DFN


  • Manufacturer: Diodes Incorporated
  • Origchip NO: 233-DMN2400UFB-7
  • Package: 3-XFDFN
  • Datasheet: PDF
  • Stock: 366
  • Description: MOSFET N-CH 20V 750MA 3DFN (Kg)

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FedEx International, 5-7 business days.

The following are some common countries' logistic time.
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Details

Tags

Parameters
Factory Lead Time 16 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 3-XFDFN
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2015
JESD-609 Code e4
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Nickel/Palladium/Gold (Ni/Pd/Au)
Additional Feature HIGH RELIABILITY
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Position BOTTOM
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 40
Pin Count 3
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Number of Channels 1
Power Dissipation-Max 470mW Ta
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
Turn On Delay Time 4.11 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 550m Ω @ 600mA, 4.5V
Vgs(th) (Max) @ Id 900mV @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 36pF @ 16V
Current - Continuous Drain (Id) @ 25°C 750mA Ta
Gate Charge (Qg) (Max) @ Vgs 0.5nC @ 4.5V
Rise Time 3.82ns
Drive Voltage (Max Rds On,Min Rds On) 1.8V 4.5V
Vgs (Max) ±12V
Fall Time (Typ) 9.6 ns
Turn-Off Delay Time 14.8 ns
Continuous Drain Current (ID) 750mA
Gate to Source Voltage (Vgs) 12V
Drain Current-Max (Abs) (ID) 0.75A
Drain-source On Resistance-Max 0.55Ohm
Drain to Source Breakdown Voltage 20V
Height 480μm
Length 1.08mm
Width 675μm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
See Relate Datesheet