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  • DMN2400UFB4-7

DMN2400UFB4-7

MOSFET N-CH 20V 750MA DFN1006H4


  • Manufacturer: Diodes Incorporated
  • Origchip NO: 233-DMN2400UFB4-7
  • Package: 3-XFDFN
  • Datasheet: PDF
  • Stock: 772
  • Description: MOSFET N-CH 20V 750MA DFN1006H4 (Kg)

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FedEx International, 5-7 business days.

The following are some common countries' logistic time.
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Details

Tags

Parameters
Factory Lead Time 6 Weeks
Contact Plating Gold
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 3-XFDFN
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2011
JESD-609 Code e4
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Additional Feature HIGH RELIABILITY, LOW THRESHOLD
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Position BOTTOM
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 40
Pin Count 3
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 470mW Ta
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
Turn On Delay Time 4.11 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 550m Ω @ 600mA, 4.5V
Vgs(th) (Max) @ Id 900mV @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 36pF @ 16V
Current - Continuous Drain (Id) @ 25°C 750mA Ta
Gate Charge (Qg) (Max) @ Vgs 0.5nC @ 4.5V
Rise Time 3.82ns
Drain to Source Voltage (Vdss) 20V
Drive Voltage (Max Rds On,Min Rds On) 1.8V 4.5V
Vgs (Max) ±12V
Fall Time (Typ) 9.6 ns
Turn-Off Delay Time 14.8 ns
Continuous Drain Current (ID) 750mA
Gate to Source Voltage (Vgs) 12V
Drain Current-Max (Abs) (ID) 0.75A
Drain-source On Resistance-Max 0.55Ohm
DS Breakdown Voltage-Min 20V
Height 350μm
Length 1.08mm
Width 675μm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
See Relate Datesheet