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  • DMN3730UFB4-7

DMN3730UFB4-7

MOSFET N-CH 30V 750MA DFN


  • Manufacturer: Diodes Incorporated
  • Origchip NO: 233-DMN3730UFB4-7
  • Package: 3-XFDFN
  • Datasheet: PDF
  • Stock: 381
  • Description: MOSFET N-CH 30V 750MA DFN (Kg)

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Shipping Cost

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Shipping Method

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Delivery Time

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FedEx International, 5-7 business days.

The following are some common countries' logistic time.
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Details

Tags

Parameters
Factory Lead Time 17 Weeks
Contact Plating Gold
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 3-XFDFN
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2012
JESD-609 Code e4
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Additional Feature HIGH RELIABILITY
Subcategory FET General Purpose Powers
Technology MOSFET (Metal Oxide)
Terminal Position BOTTOM
Terminal Form NO LEAD
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 40
Pin Count 3
Qualification Status Not Qualified
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Number of Channels 1
Power Dissipation-Max 470mW Ta
Operating Mode ENHANCEMENT MODE
Power Dissipation 690mW
Case Connection DRAIN
Turn On Delay Time 3.5 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 460m Ω @ 200mA, 4.5V
Vgs(th) (Max) @ Id 950mV @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 64.3pF @ 25V
Current - Continuous Drain (Id) @ 25°C 750mA Ta
Gate Charge (Qg) (Max) @ Vgs 1.6nC @ 4.5V
Rise Time 2.8ns
Drive Voltage (Max Rds On,Min Rds On) 1.8V 4.5V
Vgs (Max) ±8V
Fall Time (Typ) 13 ns
Turn-Off Delay Time 38 ns
Continuous Drain Current (ID) 910mA
Threshold Voltage 450mV
Gate to Source Voltage (Vgs) 8V
Drain Current-Max (Abs) (ID) 0.75A
Drain-source On Resistance-Max 0.46Ohm
Drain to Source Breakdown Voltage 30V
Height 350μm
Length 1.08mm
Width 675μm
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
See Relate Datesheet