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  • DMN4060SVT-7

DMN4060SVT-7

MOSFET N-CH 45V 4.8A TSOT26


  • Manufacturer: Diodes Incorporated
  • Origchip NO: 233-DMN4060SVT-7
  • Package: SOT-23-6 Thin, TSOT-23-6
  • Datasheet: PDF
  • Stock: 178
  • Description: MOSFET N-CH 45V 4.8A TSOT26 (Kg)

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Details

Tags

Parameters
Turn On Delay Time 6.6 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 46m Ω @ 4.3A, 10V
Vgs(th) (Max) @ Id 3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1287pF @ 25V
Current - Continuous Drain (Id) @ 25°C 4.8A Ta
Gate Charge (Qg) (Max) @ Vgs 22.4nC @ 10V
Rise Time 8.1ns
Drain to Source Voltage (Vdss) 45V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 4 ns
Turn-Off Delay Time 20.1 ns
Continuous Drain Current (ID) 4.8A
Gate to Source Voltage (Vgs) 20V
DS Breakdown Voltage-Min 45V
Height 900μm
Length 2.9mm
Width 1.6mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Factory Lead Time 17 Weeks
Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case SOT-23-6 Thin, TSOT-23-6
Number of Pins 6
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2012
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6
ECCN Code EAR99
Additional Feature HIGH RELIABILITY
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 40
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 1.2W Ta
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 1.8W
See Relate Datesheet