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  • DMN65D8LW-7

DMN65D8LW-7

MOSFET N-CH 60V 0.3A SOT323


  • Manufacturer: Diodes Incorporated
  • Origchip NO: 233-DMN65D8LW-7
  • Package: SC-70, SOT-323
  • Datasheet: PDF
  • Stock: 366
  • Description: MOSFET N-CH 60V 0.3A SOT323 (Kg)

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Details

Tags

Parameters
Factory Lead Time 16 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case SC-70, SOT-323
Number of Pins 3
Weight 6.010099mg
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2012
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Additional Feature HIGH RELIABILITY
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 40
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 300mW Ta
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Turn On Delay Time 2.7 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 3 Ω @ 115mA, 10V
Vgs(th) (Max) @ Id 2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 22pF @ 25V
Current - Continuous Drain (Id) @ 25°C 300mA Ta
Gate Charge (Qg) (Max) @ Vgs 0.87nC @ 10V
Rise Time 2.8ns
Drain to Source Voltage (Vdss) 60V
Drive Voltage (Max Rds On,Min Rds On) 5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 7.3 ns
Turn-Off Delay Time 12.6 ns
Continuous Drain Current (ID) 300mA
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 0.26A
Drain-source On Resistance-Max 4Ohm
DS Breakdown Voltage-Min 60V
Height 1mm
Length 2.2mm
Width 1.35mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
See Relate Datesheet