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DMP2021UFDF-7

MOSFET P-CH 20V 9A 6UDFN


  • Manufacturer: Diodes Incorporated
  • Origchip NO: 233-DMP2021UFDF-7
  • Package: 6-UDFN Exposed Pad
  • Datasheet: PDF
  • Stock: 534
  • Description: MOSFET P-CH 20V 9A 6UDFN (Kg)

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Shipping Cost

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The basic freight (for package ≤0.5kg or corresponding volume) depends on the time zone and country.

Shipping Method

Currently, our products are shipped through DHL, FedEx, SF, and UPS.

Delivery Time

Once the goods are shipped, estimated delivery time depends on the shipping methods you chose:

FedEx International, 5-7 business days.

The following are some common countries' logistic time.
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Details

Tags

Parameters
Factory Lead Time 22 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 6-UDFN Exposed Pad
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2015
JESD-609 Code e4
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6
ECCN Code EAR99
Terminal Finish Nickel/Palladium/Gold (Ni/Pd/Au)
Additional Feature HIGH RELIABILITY
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form NO LEAD
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Reference Standard AEC-Q101
JESD-30 Code S-PDSO-N6
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 730mW Ta
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 16m Ω @ 7A, 4.5V
Vgs(th) (Max) @ Id 1V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 2760pF @ 15V
Current - Continuous Drain (Id) @ 25°C 9A Ta
Gate Charge (Qg) (Max) @ Vgs 59nC @ 8V
Drain to Source Voltage (Vdss) 20V
Drive Voltage (Max Rds On,Min Rds On) 1.5V 4.5V
Vgs (Max) ±8V
Continuous Drain Current (ID) 9A
Drain Current-Max (Abs) (ID) 9A
Drain-source On Resistance-Max 0.016Ohm
DS Breakdown Voltage-Min 20V
RoHS Status ROHS3 Compliant
See Relate Datesheet