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  • DMP6110SSS-13

DMP6110SSS-13

MOSFET 60V P-Ch 60Vds 20Vgs FET 1030pF 19.4nC


  • Manufacturer: Diodes Incorporated
  • Origchip NO: 233-DMP6110SSS-13
  • Package: 8-SOIC (0.154, 3.90mm Width)
  • Datasheet: PDF
  • Stock: 952
  • Description: MOSFET 60V P-Ch 60Vds 20Vgs FET 1030pF 19.4nC (Kg)

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Details

Tags

Parameters
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 8
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Additional Feature HIGH RELIABILITY
Capacitance 1.03nF
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 30
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 1.5W Ta
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Turn On Delay Time 3.7 ns
FET Type P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 110m Ω @ 4.5A, 10V
Vgs(th) (Max) @ Id 3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1030pF @ 30V
Gate Charge (Qg) (Max) @ Vgs 19.4nC @ 10V
Rise Time 6.3ns
Factory Lead Time 23 Weeks
Drain to Source Voltage (Vdss) 60V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Mount Surface Mount
Vgs (Max) ±20V
Mounting Type Surface Mount
Fall Time (Typ) 26.1 ns
Turn-Off Delay Time 58.7 ns
Package / Case 8-SOIC (0.154, 3.90mm Width)
Number of Pins 8
Continuous Drain Current (ID) -4.5A
Gate to Source Voltage (Vgs) 20V
Weight 73.992255mg
Drain to Source Breakdown Voltage -60V
Transistor Element Material SILICON
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2014
See Relate Datesheet