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  • DMS3014SSS-13

DMS3014SSS-13

MOSFET N-CH 30V 10.4A 8SO


  • Manufacturer: Diodes Incorporated
  • Origchip NO: 233-DMS3014SSS-13
  • Package: 8-SOIC (0.154, 3.90mm Width)
  • Datasheet: PDF
  • Stock: 538
  • Description: MOSFET N-CH 30V 10.4A 8SO (Kg)

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Details

Tags

Parameters
RoHS Status ROHS3 Compliant
Factory Lead Time 20 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154, 3.90mm Width)
Number of Pins 8
Weight 73.992255mg
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2010
JESD-609 Code e3
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 8
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Additional Feature HIGH RELIABILITY
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 40
Pin Count 8
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Number of Channels 1
Power Dissipation-Max 1.55W Ta
Operating Mode ENHANCEMENT MODE
Power Dissipation 1.55W
Turn On Delay Time 5.5 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 13m Ω @ 10.4A, 10V
Vgs(th) (Max) @ Id 2.2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 2296pF @ 15V
Current - Continuous Drain (Id) @ 25°C 10.4A Ta
Gate Charge (Qg) (Max) @ Vgs 45.7nC @ 10V
Rise Time 24.4ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±12V
Fall Time (Typ) 6.6 ns
Turn-Off Delay Time 33.1 ns
Continuous Drain Current (ID) 10.4A
Gate to Source Voltage (Vgs) 12V
Drain to Source Breakdown Voltage 30V
Pulsed Drain Current-Max (IDM) 63A
FET Feature Schottky Diode (Body)
Radiation Hardening No
REACH SVHC No SVHC
See Relate Datesheet