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  • DMS3016SSS-13

DMS3016SSS-13

MOSFET N-CH 30V 9.8A 8SO


  • Manufacturer: Diodes Incorporated
  • Origchip NO: 233-DMS3016SSS-13
  • Package: 8-SOIC (0.154, 3.90mm Width)
  • Datasheet: PDF
  • Stock: 366
  • Description: MOSFET N-CH 30V 9.8A 8SO (Kg)

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Details

Tags

Parameters
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2010
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Technology MOSFET (Metal Oxide)
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 1.54W Ta
Power Dissipation 1.54W
Turn On Delay Time 6.62 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 13mOhm @ 9.8A, 10V
Vgs(th) (Max) @ Id 2.3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1849pF @ 15V
Current - Continuous Drain (Id) @ 25°C 9.8A Ta
Gate Charge (Qg) (Max) @ Vgs 43nC @ 10V
Rise Time 8.73ns
Drain to Source Voltage (Vdss) 30V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±12V
Fall Time (Typ) 4.69 ns
Turn-Off Delay Time 36.41 ns
Continuous Drain Current (ID) 9.8A
Threshold Voltage 1V
Factory Lead Time 7 Weeks
Gate to Source Voltage (Vgs) 12V
Mount Surface Mount
Input Capacitance 1.849nF
FET Feature Schottky Diode (Body)
Mounting Type Surface Mount
Drain to Source Resistance 9mOhm
Rds On Max 13 mΩ
Package / Case 8-SOIC (0.154, 3.90mm Width)
Radiation Hardening No
Number of Pins 8
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Supplier Device Package 8-SO
Weight 73.992255mg
See Relate Datesheet