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  • DMT8012LFG-7

DMT8012LFG-7

MOSFET N-CH 80V 9.5A PWDI3333-8


  • Manufacturer: Diodes Incorporated
  • Origchip NO: 233-DMT8012LFG-7
  • Package: 8-PowerVDFN
  • Datasheet: PDF
  • Stock: 327
  • Description: MOSFET N-CH 80V 9.5A PWDI3333-8 (Kg)

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Details

Tags

Parameters
Factory Lead Time 23 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-PowerVDFN
Number of Pins 8
Weight 72.007789mg
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2014
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Capacitance 1.949nF
Technology MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Number of Channels 1
Power Dissipation-Max 2.2W Ta 30W Tc
Element Configuration Single
Turn On Delay Time 4.9 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 16m Ω @ 12A, 10V
Vgs(th) (Max) @ Id 3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1949pF @ 40V
Current - Continuous Drain (Id) @ 25°C 9.5A Ta 35A Tc
Gate Charge (Qg) (Max) @ Vgs 34nC @ 10V
Rise Time 3.8ns
Drive Voltage (Max Rds On,Min Rds On) 6V 10V
Vgs (Max) ±20V
Fall Time (Typ) 3.5 ns
Turn-Off Delay Time 16.5 ns
Continuous Drain Current (ID) 35A
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 80V
RoHS Status ROHS3 Compliant
See Relate Datesheet