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DMTH4007LPSQ-13

MOSFET 40V 175c N-Ch FET 6.5mOhm 10Vgs 100A


  • Manufacturer: Diodes Incorporated
  • Origchip NO: 233-DMTH4007LPSQ-13
  • Package: 8-PowerTDFN
  • Datasheet: PDF
  • Stock: 990
  • Description: MOSFET 40V 175c N-Ch FET 6.5mOhm 10Vgs 100A (Kg)

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Details

Tags

Parameters
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Additional Feature HIGH RELIABILITY
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form FLAT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code not_compliant
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-PDSO-F5
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 2.7W Ta 150W Tc
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
Factory Lead Time 18 Weeks
Mount Surface Mount
Rds On (Max) @ Id, Vgs 6.5m Ω @ 20A, 10V
Mounting Type Surface Mount
Vgs(th) (Max) @ Id 3V @ 250μA
Package / Case 8-PowerTDFN
Input Capacitance (Ciss) (Max) @ Vds 1895pF @ 30V
Number of Pins 8
Current - Continuous Drain (Id) @ 25°C 15.5A Ta 100A Tc
Transistor Element Material SILICON
Operating Temperature -55°C~175°C TJ
Gate Charge (Qg) (Max) @ Vgs 29.1nC @ 10V
Drain to Source Voltage (Vdss) 40V
Packaging Tape & Reel (TR)
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Published 2015
Vgs (Max) ±20V
Series Automotive, AEC-Q101
Continuous Drain Current (ID) 100A
Drain Current-Max (Abs) (ID) 15.5A
Pulsed Drain Current-Max (IDM) 160A
JESD-609 Code e3
DS Breakdown Voltage-Min 40V
Avalanche Energy Rating (Eas) 20 mJ
Part Status Active
RoHS Status ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 5
See Relate Datesheet