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EMX2DXV6T5G

Dual NPN Bipolar Transistor


  • Manufacturer: ON Semiconductor
  • Origchip NO: 598-EMX2DXV6T5G
  • Package: SOT-563, SOT-666
  • Datasheet: PDF
  • Stock: 755
  • Description: Dual NPN Bipolar Transistor (Kg)

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Details

Tags

Parameters
Collector Emitter Saturation Voltage 400mV
Collector Base Voltage (VCBO) 60V
Emitter Base Voltage (VEBO) 7V
hFE Min 120
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Factory Lead Time 2 Weeks
Lifecycle Status ACTIVE (Last Updated: 1 week ago)
Mounting Type Surface Mount
Package / Case SOT-563, SOT-666
Surface Mount YES
Number of Pins 6
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2005
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6
ECCN Code EAR99
Terminal Finish Tin (Sn)
Voltage - Rated DC 50V
Max Power Dissipation 500mW
Terminal Form FLAT
Peak Reflow Temperature (Cel) 260
Current Rating 100mA
Frequency 180MHz
Time@Peak Reflow Temperature-Max (s) 40
Pin Count 6
Number of Elements 2
Polarity NPN
Element Configuration Dual
Power Dissipation 500mW
Transistor Application AMPLIFIER
Gain Bandwidth Product 180MHz
Transistor Type 2 NPN (Dual)
Collector Emitter Voltage (VCEO) 50V
Max Collector Current 100mA
DC Current Gain (hFE) (Min) @ Ic, Vce 120 @ 1mA 6V
Current - Collector Cutoff (Max) 500nA ICBO
Vce Saturation (Max) @ Ib, Ic 400mV @ 5mA, 50mA
Collector Emitter Breakdown Voltage 50V
Transition Frequency 180MHz
See Relate Datesheet