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FCH041N65F-F155

MOSFET N-CH 650V 76A TO247


  • Manufacturer: ON Semiconductor
  • Origchip NO: 598-FCH041N65F-F155
  • Package: TO-247-3
  • Datasheet: PDF
  • Stock: 961
  • Description: MOSFET N-CH 650V 76A TO247 (Kg)

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Details

Tags

Parameters
Element Configuration Single
Avalanche Energy Rating (Eas) 2025 mJ
RoHS Status ROHS3 Compliant
Operating Mode ENHANCEMENT MODE
Turn On Delay Time 60 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 41m Ω @ 38A, 10V
Factory Lead Time 12 Weeks
Lifecycle Status ACTIVE (Last Updated: 5 days ago)
Vgs(th) (Max) @ Id 5V @ 7.6mA
Mount Through Hole
Mounting Type Through Hole
Input Capacitance (Ciss) (Max) @ Vds 13020pF @ 100V
Package / Case TO-247-3
Weight 6.39g
Transistor Element Material SILICON
Current - Continuous Drain (Id) @ 25°C 76A Tc
Operating Temperature -55°C~150°C TJ
Packaging Tube
Gate Charge (Qg) (Max) @ Vgs 294nC @ 10V
Series FRFET®, SuperFET® II
Rise Time 47ns
JESD-609 Code e3
Drain to Source Voltage (Vdss) 650V
Pbfree Code yes
Part Status Active
Drive Voltage (Max Rds On,Min Rds On) 10V
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Vgs (Max) ±20V
Resistance 44mOhm
Terminal Finish Tin (Sn)
Fall Time (Typ) 6.5 ns
Subcategory FET General Purpose Power
Turn-Off Delay Time 190 ns
Technology MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel) NOT SPECIFIED
Continuous Drain Current (ID) 76A
Reach Compliance Code not_compliant
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
JEDEC-95 Code TO-247AB
JESD-30 Code R-PSFM-T3
Gate to Source Voltage (Vgs) 30V
Number of Elements 1
Pulsed Drain Current-Max (IDM) 228A
Number of Channels 1
Power Dissipation-Max 595W Tc
DS Breakdown Voltage-Min 650V
See Relate Datesheet