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FDB150N10

MOSFET 100V N-Channel PowerTrench


  • Manufacturer: ON Semiconductor
  • Origchip NO: 598-FDB150N10
  • Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Datasheet: PDF
  • Stock: 460
  • Description: MOSFET 100V N-Channel PowerTrench (Kg)

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RFQ (Request for Quotations)

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Our sales will reply to your request by email within 24 hours.

IMPORTANT NOTICE

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2. Since inventories and prices may fluctuate to some extent, the sales manager is going to reconfirm the order and let you know if there are any updates.

Shipping Cost

Shipping starts at $40, but some countries will exceed $40. For example (South Africa, Brazil, India, Pakistan, Israel, etc.)
The basic freight (for package ≤0.5kg or corresponding volume) depends on the time zone and country.

Shipping Method

Currently, our products are shipped through DHL, FedEx, SF, and UPS.

Delivery Time

Once the goods are shipped, estimated delivery time depends on the shipping methods you chose:

FedEx International, 5-7 business days.

The following are some common countries' logistic time.
transport

Details

Tags

Parameters
Factory Lead Time 8 Weeks
Lifecycle Status ACTIVE (Last Updated: 4 days ago)
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins 3
Weight 1.31247g
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Series PowerTrench®
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Resistance 15MOhm
Terminal Finish Tin (Sn)
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Form GULL WING
JESD-30 Code R-PSSO-G2
Number of Elements 1
Power Dissipation-Max 110W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 110W
Case Connection DRAIN
Turn On Delay Time 47 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 15m Ω @ 49A, 10V
Vgs(th) (Max) @ Id 4.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 4760pF @ 25V
Current - Continuous Drain (Id) @ 25°C 57A Tc
Gate Charge (Qg) (Max) @ Vgs 69nC @ 10V
Rise Time 164ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 83 ns
Turn-Off Delay Time 86 ns
Continuous Drain Current (ID) 57A
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 100V
Pulsed Drain Current-Max (IDM) 228A
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
See Relate Datesheet