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FDC658P

FDC658P datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available at Feilidi


  • Manufacturer: ON Semiconductor
  • Origchip NO: 598-FDC658P
  • Package: SOT-23-6 Thin, TSOT-23-6
  • Datasheet: PDF
  • Stock: 295
  • Description: FDC658P datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available at Feilidi (Kg)

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Details

Tags

Parameters
Height 1.1mm
Length 3mm
Number of Terminations 6
ECCN Code EAR99
Width 1.7mm
Radiation Hardening No
Resistance 50mOhm
REACH SVHC No SVHC
Additional Feature LOGIC LEVEL COMPATIBLE
RoHS Status ROHS3 Compliant
Subcategory Other Transistors
Lead Free Lead Free
Voltage - Rated DC -30V
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form GULL WING
Current Rating -4A
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 1.6W Ta
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 1.6W
Turn On Delay Time 12 ns
FET Type P-Channel
Transistor Application SWITCHING
Factory Lead Time 10 Weeks
Rds On (Max) @ Id, Vgs 50m Ω @ 4A, 10V
Lifecycle Status ACTIVE (Last Updated: 2 days ago)
Vgs(th) (Max) @ Id 3V @ 250μA
Contact Plating Tin
Mount Surface Mount
Input Capacitance (Ciss) (Max) @ Vds 750pF @ 15V
Mounting Type Surface Mount
Current - Continuous Drain (Id) @ 25°C 4A Ta
Gate Charge (Qg) (Max) @ Vgs 12nC @ 5V
Package / Case SOT-23-6 Thin, TSOT-23-6
Rise Time 14ns
Number of Pins 6
Drain to Source Voltage (Vdss) 30V
Weight 36mg
Drive Voltage (Max Rds On,Min Rds On) 10V
Transistor Element Material SILICON
Vgs (Max) ±20V
Operating Temperature -55°C~150°C TJ
Fall Time (Typ) 16 ns
Packaging Tape & Reel (TR)
Turn-Off Delay Time 24 ns
Published 2017
Continuous Drain Current (ID) -4A
Threshold Voltage -1.7V
Series PowerTrench®
Gate to Source Voltage (Vgs) 20V
JESD-609 Code e3
Drain Current-Max (Abs) (ID) 4A
Pbfree Code yes
Part Status Active
Drain to Source Breakdown Voltage -30V
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Junction Temperature (Tj) 150°C
See Relate Datesheet