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  • FDD6780A

FDD6780A

MOSFET N-CH 25V 16.4A DPAK


  • Manufacturer: ON Semiconductor
  • Origchip NO: 598-FDD6780A
  • Package: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Datasheet: PDF
  • Stock: 151
  • Description: MOSFET N-CH 25V 16.4A DPAK (Kg)

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Details

Tags

Parameters
FET Type N-Channel
Mount Surface Mount
Mounting Type Surface Mount
Transistor Application SWITCHING
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Rds On (Max) @ Id, Vgs 8.6m Ω @ 16.4A, 10V
Number of Pins 3
Vgs(th) (Max) @ Id 3V @ 250μA
Transistor Element Material SILICON
Input Capacitance (Ciss) (Max) @ Vds 1235pF @ 13V
Operating Temperature -55°C~175°C TJ
Current - Continuous Drain (Id) @ 25°C 16.4A Ta 30A Tc
Gate Charge (Qg) (Max) @ Vgs 24nC @ 10V
Packaging Tape & Reel (TR)
Rise Time 3ns
Series PowerTrench®
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Part Status Obsolete
Vgs (Max) ±20V
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Fall Time (Typ) 3 ns
Number of Terminations 2
Turn-Off Delay Time 16 ns
ECCN Code EAR99
Resistance 8.6MOhm
Continuous Drain Current (ID) 16.4A
Gate to Source Voltage (Vgs) 20V
Subcategory FET General Purpose Power
Drain Current-Max (Abs) (ID) 48A
Drain to Source Breakdown Voltage 25V
Avalanche Energy Rating (Eas) 24 mJ
Technology MOSFET (Metal Oxide)
Height 2.39mm
Terminal Form GULL WING
Length 6.73mm
JESD-30 Code R-PSSO-G2
Width 6.22mm
Number of Elements 1
Radiation Hardening No
Power Dissipation-Max 3.7W Ta 32.6W Tc
RoHS Status RoHS Compliant
Lead Free Lead Free
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 3.7W
Case Connection DRAIN
Turn On Delay Time 7 ns
See Relate Datesheet