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  • FDH038AN08A1

FDH038AN08A1

N-Channel PowerTrench® MOSFET, 75V, 80A, 3.8mO


  • Manufacturer: ON Semiconductor
  • Origchip NO: 598-FDH038AN08A1
  • Package: TO-247-3
  • Datasheet: -
  • Stock: 920
  • Description: N-Channel PowerTrench® MOSFET, 75V, 80A, 3.8mO (Kg)

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Details

Tags

Parameters
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Factory Lead Time 4 Weeks
Lifecycle Status ACTIVE (Last Updated: 2 days ago)
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Number of Pins 3
Weight 6.39g
Transistor Element Material SILICON
Operating Temperature -55°C~175°C TJ
Packaging Tube
Published 2013
Series PowerTrench®
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Subcategory FET General Purpose Power
Voltage - Rated DC 75V
Technology MOSFET (Metal Oxide)
Current Rating 80A
Number of Elements 1
Power Dissipation-Max 450W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 450W
Turn On Delay Time 88 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 3.8m Ω @ 80A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 8665pF @ 25V
Current - Continuous Drain (Id) @ 25°C 22A Ta 80A Tc
Gate Charge (Qg) (Max) @ Vgs 160nC @ 10V
Rise Time 141ns
Drive Voltage (Max Rds On,Min Rds On) 6V 10V
Vgs (Max) ±20V
Fall Time (Typ) 126 ns
Turn-Off Delay Time 232 ns
Continuous Drain Current (ID) 80A
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 22A
Drain to Source Breakdown Voltage 75V
Height 20.82mm
Length 15.87mm
Width 4.82mm
Radiation Hardening No
See Relate Datesheet