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  • FDPF3N50NZ

FDPF3N50NZ

FDPF3N50NZ datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available at Feilidi


  • Manufacturer: ON Semiconductor
  • Origchip NO: 598-FDPF3N50NZ
  • Package: TO-220-3 Full Pack
  • Datasheet: PDF
  • Stock: 150
  • Description: FDPF3N50NZ datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available at Feilidi (Kg)

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Details

Tags

Parameters
Factory Lead Time 4 Weeks
Lifecycle Status ACTIVE (Last Updated: 4 days ago)
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3 Full Pack
Number of Pins 3
Weight 2.27g
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2010
Series UniFET-II™
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin (Sn)
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Number of Elements 1
Power Dissipation-Max 27W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 27W
Case Connection ISOLATED
Turn On Delay Time 10 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 2.5 Ω @ 1.5A, 10V
Vgs(th) (Max) @ Id 5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 280pF @ 25V
Current - Continuous Drain (Id) @ 25°C 3A Tc
Gate Charge (Qg) (Max) @ Vgs 9nC @ 10V
Rise Time 15ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±25V
Fall Time (Typ) 17 ns
Turn-Off Delay Time 26 ns
Continuous Drain Current (ID) 3A
JEDEC-95 Code TO-220AB
Gate to Source Voltage (Vgs) 25V
Drain Current-Max (Abs) (ID) 3A
Drain to Source Breakdown Voltage 500V
Height 15.87mm
Length 10.16mm
Width 4.7mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
See Relate Datesheet