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FDZ663P

MOSFET PCh 1.5 V SPECIFIED PowerTrench MOSFET


  • Manufacturer: ON Semiconductor
  • Origchip NO: 598-FDZ663P
  • Package: 4-XFBGA, WLCSP
  • Datasheet: -
  • Stock: 369
  • Description: MOSFET PCh 1.5 V SPECIFIED PowerTrench MOSFET (Kg)

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Details

Tags

Parameters
Input Capacitance (Ciss) (Max) @ Vds 525pF @ 10V
Current - Continuous Drain (Id) @ 25°C 2.7A Ta
Gate Charge (Qg) (Max) @ Vgs 8.2nC @ 4.5V
Rise Time 6.2ns
Drain to Source Voltage (Vdss) 20V
Drive Voltage (Max Rds On,Min Rds On) 1.5V 4.5V
Vgs (Max) ±8V
Fall Time (Typ) 32 ns
Turn-Off Delay Time 67 ns
Continuous Drain Current (ID) 2.7A
Gate to Source Voltage (Vgs) 8V
Drain to Source Breakdown Voltage -20V
Feedback Cap-Max (Crss) 80 pF
Height 150μm
Length 800μm
Width 800μm
Radiation Hardening No
RoHS Status RoHS Compliant
Lead Free Lead Free
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 4-XFBGA, WLCSP
Number of Pins 4
Weight 67mg
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Series PowerTrench®
JESD-609 Code e1
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 4
ECCN Code EAR99
Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu)
Subcategory Other Transistors
Technology MOSFET (Metal Oxide)
Terminal Position BOTTOM
Terminal Form BALL
Number of Elements 1
Power Dissipation-Max 1.3W Ta
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 1.3W
Turn On Delay Time 4.8 ns
FET Type P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 134m Ω @ 2A, 4.5V
Vgs(th) (Max) @ Id 1.2V @ 250μA
See Relate Datesheet