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FMB200

Bipolar Transistors - BJT PNP Multi-Chip Trans General Purpose


  • Manufacturer: ON Semiconductor
  • Origchip NO: 598-FMB200
  • Package: SOT-23-6 Thin, TSOT-23-6
  • Datasheet: PDF
  • Stock: 581
  • Description: Bipolar Transistors - BJT PNP Multi-Chip Trans General Purpose (Kg)

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Details

Tags

Parameters
Factory Lead Time 28 Weeks
Lifecycle Status LIFETIME (Last Updated: 5 days ago)
Mount Surface Mount
Mounting Type Surface Mount
Package / Case SOT-23-6 Thin, TSOT-23-6
Number of Pins 6
Weight 36mg
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2017
JESD-609 Code e3
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6
ECCN Code EAR99
Terminal Finish Tin (Sn)
Subcategory Other Transistors
Voltage - Rated DC -45V
Max Power Dissipation 700mW
Terminal Form GULL WING
Current Rating -500mA
Frequency 300MHz
Base Part Number FMB200
Number of Elements 2
Polarity PNP
Element Configuration Dual
Power Dissipation 700mW
Transistor Application AMPLIFIER
Gain Bandwidth Product 300MHz
Transistor Type 2 PNP (Dual)
Collector Emitter Voltage (VCEO) 45V
Max Collector Current 500mA
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 150mA 5V
Current - Collector Cutoff (Max) 50nA
Vce Saturation (Max) @ Ib, Ic 400mV @ 20mA, 200mA
Collector Emitter Breakdown Voltage 45V
Transition Frequency 300MHz
Collector Emitter Saturation Voltage 400mV
Max Breakdown Voltage 45V
Collector Base Voltage (VCBO) -60V
Emitter Base Voltage (VEBO) -6V
hFE Min 100
Height 1mm
Length 3mm
Width 1.7mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
See Relate Datesheet