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FQB34P10TM-F085

MOSFET P-CH 100V 33.5A D2PAK


  • Manufacturer: ON Semiconductor
  • Origchip NO: 598-FQB34P10TM-F085
  • Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Datasheet: -
  • Stock: 508
  • Description: MOSFET P-CH 100V 33.5A D2PAK (Kg)

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Details

Tags

Parameters
RoHS Status ROHS3 Compliant
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins 3
Weight 1.31247g
Transistor Element Material SILICON
Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Published 2004
Series Automotive, AEC-Q101, QFET®
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
Terminal Finish Tin (Sn)
Subcategory Other Transistors
Technology MOSFET (Metal Oxide)
Terminal Form GULL WING
JESD-30 Code R-PSSO-G2
Number of Elements 1
Power Dissipation-Max 3.75W Ta 155W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 3.75W
Case Connection DRAIN
Turn On Delay Time 25 ns
FET Type P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 60m Ω @ 16.75A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 2910pF @ 25V
Current - Continuous Drain (Id) @ 25°C 33.5A Tc
Gate Charge (Qg) (Max) @ Vgs 110nC @ 10V
Rise Time 250ns
Drain to Source Voltage (Vdss) 100V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±25V
Fall Time (Typ) 210 ns
Turn-Off Delay Time 160 ns
Continuous Drain Current (ID) 33.5A
Gate to Source Voltage (Vgs) 25V
Drain-source On Resistance-Max 0.06Ohm
Drain to Source Breakdown Voltage -100V
Avalanche Energy Rating (Eas) 2200 mJ
Radiation Hardening No
See Relate Datesheet