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  • FQD20N06TM

FQD20N06TM

FQD20N06TM datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available at Feilidi


  • Manufacturer: ON Semiconductor
  • Origchip NO: 598-FQD20N06TM
  • Package: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Datasheet: PDF
  • Stock: 106
  • Description: FQD20N06TM datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available at Feilidi (Kg)

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Details

Tags

Parameters
Gate to Source Voltage (Vgs) 25V
Drain to Source Breakdown Voltage 60V
Height 2.3mm
Length 6.6mm
Width 6.1mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Factory Lead Time 4 Weeks
Lifecycle Status ACTIVE (Last Updated: 1 day ago)
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2001
Series QFET®
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Terminal Finish Tin (Sn)
Subcategory FET General Purpose Power
Voltage - Rated DC 60V
Technology MOSFET (Metal Oxide)
Terminal Form GULL WING
Current Rating 16.8A
JESD-30 Code R-PSSO-G2
Number of Elements 1
Voltage 55V
Power Dissipation-Max 2.5W Ta 38W Tc
Element Configuration Single
Current 18A
Operating Mode ENHANCEMENT MODE
Power Dissipation 2.5W
Case Connection DRAIN
Turn On Delay Time 5 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 63m Ω @ 8.4A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 590pF @ 25V
Current - Continuous Drain (Id) @ 25°C 16.8A Tc
Gate Charge (Qg) (Max) @ Vgs 15nC @ 10V
Rise Time 45ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±25V
Fall Time (Typ) 25 ns
Turn-Off Delay Time 20 ns
Continuous Drain Current (ID) 16.8A
Threshold Voltage 4V
See Relate Datesheet