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  • FQD5P10TM

FQD5P10TM

P-channel Power Mosfet, Qfet®, -100 V, -3.6 A, 1.05 ?, Dpak


  • Manufacturer: ON Semiconductor
  • Origchip NO: 598-FQD5P10TM
  • Package: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Datasheet: PDF
  • Stock: 554
  • Description: P-channel Power Mosfet, Qfet®, -100 V, -3.6 A, 1.05 ?, Dpak (Kg)

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Details

Tags

Parameters
Gate Charge (Qg) (Max) @ Vgs 8.2nC @ 10V
Rise Time 70ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
Fall Time (Typ) 30 ns
Turn-Off Delay Time 12 ns
Continuous Drain Current (ID) 3.6A
Threshold Voltage -2V
Gate to Source Voltage (Vgs) 30V
Drain to Source Breakdown Voltage -100V
Avalanche Energy Rating (Eas) 55 mJ
Height 2.39mm
Length 6.73mm
Width 6.22mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Factory Lead Time 4 Weeks
Lifecycle Status ACTIVE (Last Updated: 1 day ago)
Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 1999
Series QFET®
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Subcategory Other Transistors
Voltage - Rated DC -100V
Technology MOSFET (Metal Oxide)
Terminal Form GULL WING
Current Rating -3.6A
JESD-30 Code R-PSSO-G2
Number of Elements 1
Voltage 100V
Power Dissipation-Max 2.5W Ta 25W Tc
Element Configuration Single
Current 36A
Operating Mode ENHANCEMENT MODE
Power Dissipation 2.5W
Case Connection DRAIN
Turn On Delay Time 9 ns
FET Type P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 1.05 Ω @ 1.8A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 250pF @ 25V
Current - Continuous Drain (Id) @ 25°C 3.6A Tc
See Relate Datesheet