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FQH44N10-F133

MOSFET N-CH 100V 48A TO-247


  • Manufacturer: ON Semiconductor
  • Origchip NO: 598-FQH44N10-F133
  • Package: TO-247-3
  • Datasheet: PDF
  • Stock: 175
  • Description: MOSFET N-CH 100V 48A TO-247 (Kg)

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Details

Tags

Parameters
Package / Case TO-247-3
Weight 6.39g
Transistor Element Material SILICON
Operating Temperature -55°C~175°C TJ
Packaging Tube
Series QFET®
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
JESD-30 Code R-PSFM-T3
Number of Elements 1
Power Dissipation-Max 180W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 180W
Turn On Delay Time 19 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 39m Ω @ 24A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1800pF @ 25V
Current - Continuous Drain (Id) @ 25°C 48A Tc
Gate Charge (Qg) (Max) @ Vgs 62nC @ 10V
Rise Time 190ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±25V
Fall Time (Typ) 100 ns
Turn-Off Delay Time 90 ns
Continuous Drain Current (ID) 48A
JEDEC-95 Code TO-247AB
Gate to Source Voltage (Vgs) 25V
Drain-source On Resistance-Max 0.039Ohm
Drain to Source Breakdown Voltage 100V
Pulsed Drain Current-Max (IDM) 192A
Avalanche Energy Rating (Eas) 530 mJ
Radiation Hardening No
RoHS Status ROHS3 Compliant
Factory Lead Time 4 Weeks
Lifecycle Status ACTIVE (Last Updated: 2 days ago)
Mount Through Hole
Mounting Type Through Hole
See Relate Datesheet