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  • FQP2N80

FQP2N80

FQP2N80 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available at Feilidi


  • Manufacturer: ON Semiconductor
  • Origchip NO: 598-FQP2N80
  • Package: TO-220-3
  • Datasheet: PDF
  • Stock: 766
  • Description: FQP2N80 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available at Feilidi (Kg)

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Details

Tags

Parameters
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 6.3 Ω @ 1.2A, 10V
Vgs(th) (Max) @ Id 5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 550pF @ 25V
Current - Continuous Drain (Id) @ 25°C 2.4A Tc
Gate Charge (Qg) (Max) @ Vgs 15nC @ 10V
Rise Time 30ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Factory Lead Time 5 Weeks
Lifecycle Status ACTIVE (Last Updated: 1 week ago)
Vgs (Max) ±30V
Fall Time (Typ) 28 ns
Mount Through Hole
Turn-Off Delay Time 25 ns
Mounting Type Through Hole
Continuous Drain Current (ID) 2.4A
Package / Case TO-220-3
JEDEC-95 Code TO-220AB
Gate to Source Voltage (Vgs) 30V
Number of Pins 3
Drain to Source Breakdown Voltage 800V
Pulsed Drain Current-Max (IDM) 9.6A
Weight 1.8g
Height 9.4mm
Transistor Element Material SILICON
Length 10.1mm
Width 4.7mm
Operating Temperature -55°C~150°C TJ
Radiation Hardening No
Packaging Tube
RoHS Status ROHS3 Compliant
Published 2000
Lead Free Lead Free
Series QFET®
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin (Sn)
Subcategory FET General Purpose Power
Voltage - Rated DC 800V
Technology MOSFET (Metal Oxide)
Current Rating 2.4A
Number of Elements 1
Power Dissipation-Max 85W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 85W
Turn On Delay Time 12 ns
See Relate Datesheet