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IMT17-7

Bipolar Transistors - BJT 300mW -50Vceo


  • Manufacturer: Diodes Incorporated
  • Origchip NO: 233-IMT17-7
  • Package: SOT-23-6
  • Datasheet: PDF
  • Stock: 991
  • Description: Bipolar Transistors - BJT 300mW -50Vceo (Kg)

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Details

Tags

Parameters
Factory Lead Time 19 Weeks
Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case SOT-23-6
Number of Pins 6
Weight 29.993795mg
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2009
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6
ECCN Code EAR99
Subcategory Other Transistors
Max Power Dissipation 300mW
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Frequency 200MHz
Time@Peak Reflow Temperature-Max (s) 40
Base Part Number MT17
Pin Count 6
Number of Elements 2
Polarity PNP
Element Configuration Dual
Power Dissipation 300mW
Gain Bandwidth Product 200MHz
Transistor Type 2 PNP (Dual)
Collector Emitter Voltage (VCEO) 50V
Max Collector Current 500mA
DC Current Gain (hFE) (Min) @ Ic, Vce 120 @ 100mA 3V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 600mV @ 50mA, 500mA
Collector Emitter Breakdown Voltage 50V
Transition Frequency 200MHz
Collector Emitter Saturation Voltage -600mV
Max Breakdown Voltage 50V
Collector Base Voltage (VCBO) 60V
Emitter Base Voltage (VEBO) 5V
Height 1.1mm
Length 3mm
Width 1.6mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
See Relate Datesheet