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  • IRF540PBF

IRF540PBF

VISHAY - IRF540PBF - MOSFET, N, 100V, 28A, TO-220


  • Manufacturer: Vishay Siliconix
  • Origchip NO: 880-IRF540PBF
  • Package: TO-220-3
  • Datasheet: PDF
  • Stock: 911
  • Description: VISHAY - IRF540PBF - MOSFET, N, 100V, 28A, TO-220 (Kg)

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Details

Tags

Parameters
Factory Lead Time 8 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Number of Pins 3
Supplier Device Package TO-220AB
Weight 6.000006g
Operating Temperature -55°C~175°C TJ
Packaging Tube
Published 2008
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Resistance 77mOhm
Max Operating Temperature 175°C
Min Operating Temperature -55°C
Voltage - Rated DC 100V
Technology MOSFET (Metal Oxide)
Current Rating 28A
Number of Elements 1
Number of Channels 1
Voltage 100V
Power Dissipation-Max 150W Tc
Element Configuration Single
Current 28A
Power Dissipation 150W
Turn On Delay Time 11 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 77mOhm @ 17A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1700pF @ 25V
Current - Continuous Drain (Id) @ 25°C 28A Tc
Gate Charge (Qg) (Max) @ Vgs 72nC @ 10V
Rise Time 44ns
Drain to Source Voltage (Vdss) 100V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 43 ns
Turn-Off Delay Time 53 ns
Continuous Drain Current (ID) 28A
Threshold Voltage 4V
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 100V
Input Capacitance 1.7nF
Recovery Time 360 ns
Max Junction Temperature (Tj) 175°C
Drain to Source Resistance 77mOhm
Rds On Max 77 mΩ
Nominal Vgs 4 V
Height 19.89mm
Length 10.51mm
Width 4.7mm
Radiation Hardening No
REACH SVHC Unknown
RoHS Status ROHS3 Compliant
Lead Free Lead Free
See Relate Datesheet