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  • IRF740STRRPBF

IRF740STRRPBF

MOSFET N-CH 400V 10A D2PAK


  • Manufacturer: Vishay Siliconix
  • Origchip NO: 880-IRF740STRRPBF
  • Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Datasheet: PDF
  • Stock: 266
  • Description: MOSFET N-CH 400V 10A D2PAK (Kg)

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FedEx International, 5-7 business days.

The following are some common countries' logistic time.
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Details

Tags

Parameters
Factory Lead Time 11 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins 3
Weight 1.437803g
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2012
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
Terminal Finish Matte Tin (Sn)
Additional Feature AVALANCHE RATED
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 30
Pin Count 3
JESD-30 Code R-PSSO-G2
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 3.1W Ta 125W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 3.1W
Case Connection DRAIN
Turn On Delay Time 14 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 550m Ω @ 6A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1400pF @ 25V
Current - Continuous Drain (Id) @ 25°C 10A Tc
Gate Charge (Qg) (Max) @ Vgs 63nC @ 10V
Rise Time 27ns
Drain to Source Voltage (Vdss) 400V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 24 ns
Turn-Off Delay Time 50 ns
Continuous Drain Current (ID) 10A
Gate to Source Voltage (Vgs) 20V
Drain-source On Resistance-Max 0.55Ohm
Pulsed Drain Current-Max (IDM) 40A
DS Breakdown Voltage-Min 400V
Avalanche Energy Rating (Eas) 520 mJ
Height 4.83mm
Length 10.67mm
Width 9.65mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
See Relate Datesheet