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  • IRFI620GPBF

IRFI620GPBF

Single N-Channel 200 V 0.8 Ohms Flange Mount Power Mosfet - TO-220FP


  • Manufacturer: Vishay Siliconix
  • Origchip NO: 880-IRFI620GPBF
  • Package: TO-220-3 Full Pack, Isolated Tab
  • Datasheet: PDF
  • Stock: 534
  • Description: Single N-Channel 200 V 0.8 Ohms Flange Mount Power Mosfet - TO-220FP (Kg)

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Details

Tags

Parameters
Factory Lead Time 8 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3 Full Pack, Isolated Tab
Number of Pins 3
Weight 6.000006g
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2004
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Resistance 800mOhm
Terminal Finish MATTE TIN
Voltage - Rated DC 200V
Technology MOSFET (Metal Oxide)
Current Rating 4.1A
Pin Count 3
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 30W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 30W
Turn On Delay Time 7.2 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 800m Ω @ 2.5A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 260pF @ 25V
Current - Continuous Drain (Id) @ 25°C 4.1A Tc
Gate Charge (Qg) (Max) @ Vgs 14nC @ 10V
Rise Time 22ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 13 ns
Turn-Off Delay Time 19 ns
Continuous Drain Current (ID) 4.1A
Threshold Voltage 4V
JEDEC-95 Code TO-220AB
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 200V
Dual Supply Voltage 200V
Recovery Time 300 ns
Isolation Voltage 2.5kV
Nominal Vgs 4 V
Height 9.8mm
Length 10.63mm
Width 4.83mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
See Relate Datesheet