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  • KSP10TA

KSP10TA

NPN 1 W 25 V Through Hole Epitaxial Silicon Transistor - TO-92-3


  • Manufacturer: ON Semiconductor
  • Origchip NO: 598-KSP10TA
  • Package: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
  • Datasheet: PDF
  • Stock: 760
  • Description: NPN 1 W 25 V Through Hole Epitaxial Silicon Transistor - TO-92-3 (Kg)

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Details

Tags

Parameters
ECCN Code EAR99
Terminal Finish Tin (Sn)
Subcategory Other Transistors
Voltage - Rated DC 25V
Max Power Dissipation 350mW
Terminal Position BOTTOM
Current Rating 100mA
Frequency 650MHz
Base Part Number KSP10
Number of Elements 1
Element Configuration Single
Power Dissipation 350mW
Gain Bandwidth Product 650MHz
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 25V
Max Collector Current 4mA
DC Current Gain (hFE) (Min) @ Ic, Vce 60 @ 4mA 10V
Collector Emitter Breakdown Voltage 25V
Transition Frequency 650MHz
Collector Emitter Saturation Voltage 500mV
Max Breakdown Voltage 25V
Collector Base Voltage (VCBO) 30V
Emitter Base Voltage (VEBO) 3V
hFE Min 60
Collector-Base Capacitance-Max 0.7pF
Height 4.58mm
Length 4.58mm
Width 3.86mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Factory Lead Time 7 Weeks
Lifecycle Status ACTIVE (Last Updated: 1 week ago)
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Number of Pins 3
Weight 240mg
Transistor Element Material SILICON
Operating Temperature 150°C TJ
Packaging Tape & Box (TB)
Published 2002
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
See Relate Datesheet