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LP0701LG-G

MOSFET,P-CHANNEL ENHANCEMENT-MODE,-16.5V,1.5 Ohm8 SOIC 3.90mm(.150in) T/R


  • Manufacturer: Microchip Technology
  • Origchip NO: 536-LP0701LG-G
  • Package: 8-SOIC (0.154, 3.90mm Width)
  • Datasheet: PDF
  • Stock: 206
  • Description: MOSFET,P-CHANNEL ENHANCEMENT-MODE,-16.5V,1.5 Ohm8 SOIC 3.90mm(.150in) T/R (Kg)

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Details

Tags

Parameters
Factory Lead Time 17 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154, 3.90mm Width)
Number of Pins 8
Weight 84.99187mg
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2013
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 8
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Additional Feature LOW THRESHOLD
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 40
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Number of Channels 1
Power Dissipation-Max 1.5W Tc
Operating Mode ENHANCEMENT MODE
Power Dissipation 1.5W
Turn On Delay Time 20 ns
FET Type P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 1.5 Ω @ 300mA, 5V
Vgs(th) (Max) @ Id 1V @ 1.1mA
Input Capacitance (Ciss) (Max) @ Vds 250pF @ 15V
Current - Continuous Drain (Id) @ 25°C 700mA Tj
Rise Time 20ns
Drain to Source Voltage (Vdss) 16.5V
Drive Voltage (Max Rds On,Min Rds On) 2V 5V
Vgs (Max) ±10V
Fall Time (Typ) 20 ns
Turn-Off Delay Time 30 ns
Continuous Drain Current (ID) 700mA
Gate to Source Voltage (Vgs) 10V
Drain Current-Max (Abs) (ID) 0.7A
Drain to Source Breakdown Voltage -16.5V
Feedback Cap-Max (Crss) 60 pF
Height 1.65mm
Length 4.9mm
Width 3.9mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
See Relate Datesheet