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MAGX-002731-180L00

FETS RF GAN HEMT 180W 2.7-3.1GHZ


  • Manufacturer: M/A-Com Technology Solutions
  • Origchip NO: 482-MAGX-002731-180L00
  • Package: Ceramic
  • Datasheet: PDF
  • Stock: 377
  • Description: FETS RF GAN HEMT 180W 2.7-3.1GHZ (Kg)

Purchase & Inquiry

Transport

Purchase

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Means of Payment

For your convenience, we accept multiple payment methods in USD, including PayPal, Credit Card, and wire transfer.

RFQ (Request for Quotations)

It is recommended to request for quotations to get the latest prices and inventories about the part.
Our sales will reply to your request by email within 24 hours.

IMPORTANT NOTICE

1. You'll receive an order information email in your inbox. (Please remember to check the spam folder if you didn't hear from us).
2. Since inventories and prices may fluctuate to some extent, the sales manager is going to reconfirm the order and let you know if there are any updates.

Shipping Cost

Shipping starts at $40, but some countries will exceed $40. For example (South Africa, Brazil, India, Pakistan, Israel, etc.)
The basic freight (for package ≤0.5kg or corresponding volume) depends on the time zone and country.

Shipping Method

Currently, our products are shipped through DHL, FedEx, SF, and UPS.

Delivery Time

Once the goods are shipped, estimated delivery time depends on the shipping methods you chose:

FedEx International, 5-7 business days.

The following are some common countries' logistic time.
transport

Details

Tags

Parameters
Mount Screw
Package / Case Ceramic
Number of Pins 3
Packaging Bulk
Published 2015
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Max Operating Temperature 95°C
Min Operating Temperature -40°C
Voltage - Rated 65V
Subcategory FET RF Small Signal
Max Power Dissipation 192W
Terminal Position DUAL
Terminal Form FLAT
Current Rating 500mA
Frequency 2.7GHz~3.1GHz
Pin Count 2
JESD-30 Code R-CDFM-F2
Number of Elements 1
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Case Connection SOURCE
Transistor Application AMPLIFIER
Drain to Source Voltage (Vdss) 175V
Polarity/Channel Type N-CHANNEL
Transistor Type HEMT
Continuous Drain Current (ID) 10A
Gate to Source Voltage (Vgs) -8V
Gain 11.2dB
Power - Output 180W
FET Technology HIGH ELECTRON MOBILITY
Voltage - Test 50V
Radiation Hardening No
RoHS Status RoHS Compliant
See Relate Datesheet