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MBRT200100

MBRT200100 datasheet pdf and Diodes - Rectifiers - Arrays product details from GeneSiC Semiconductor stock available at Feilidi


  • Manufacturer: GeneSiC Semiconductor
  • Origchip NO: 347-MBRT200100
  • Package: Three Tower
  • Datasheet: PDF
  • Stock: 741
  • Description: MBRT200100 datasheet pdf and Diodes - Rectifiers - Arrays product details from GeneSiC Semiconductor stock available at Feilidi (Kg)

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Details

Tags

Parameters
Element Configuration Common Cathode
Speed Fast Recovery =< 500ns, > 200mA (Io)
Diode Type Schottky
Current - Reverse Leakage @ Vr 1mA @ 20V
Voltage - Forward (Vf) (Max) @ If 880mV @ 100A
Case Connection ISOLATED
Forward Current 200A
Max Reverse Leakage Current 1μA
Operating Temperature - Junction -55°C~150°C
Max Surge Current 1.5kA
Output Current-Max 100A
Application POWER
Current - Average Rectified (Io) 200A DC
Max Reverse Voltage (DC) 100V
Average Rectified Current 200A
Number of Phases 1
Peak Reverse Current 1A
Max Repetitive Reverse Voltage (Vrrm) 100V
Diode Configuration 1 Pair Common Cathode
RoHS Status RoHS Compliant
Factory Lead Time 6 Weeks
Lifecycle Status PRODUCTION (Last Updated: 4 months ago)
Mount Chassis Mount
Mounting Type Chassis Mount
Package / Case Three Tower
Diode Element Material SILICON
Packaging Bulk
Published 2010
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Max Operating Temperature 150°C
Min Operating Temperature -40°C
Terminal Position UPPER
Terminal Form UNSPECIFIED
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-PUFM-X3
Number of Elements 2
See Relate Datesheet