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MIXA101W1200EH

IGBT MODULE 1200V 155A 500W E3


  • Manufacturer: IXYS
  • Origchip NO: 401-MIXA101W1200EH
  • Package: E3
  • Datasheet: PDF
  • Stock: 174
  • Description: IGBT MODULE 1200V 155A 500W E3 (Kg)

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Shipping Cost

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The basic freight (for package ≤0.5kg or corresponding volume) depends on the time zone and country.

Shipping Method

Currently, our products are shipped through DHL, FedEx, SF, and UPS.

Delivery Time

Once the goods are shipped, estimated delivery time depends on the shipping methods you chose:

FedEx International, 5-7 business days.

The following are some common countries' logistic time.
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Details

Tags

Parameters
Current - Collector Cutoff (Max) 300μA
Collector Emitter Breakdown Voltage 1.2kV
Voltage - Collector Emitter Breakdown (Max) 1200V
Collector Emitter Saturation Voltage 1.8V
Turn On Time 110 ns
Vce(on) (Max) @ Vge, Ic 2.1V @ 15V, 100A
Turn Off Time-Nom (toff) 350 ns
IGBT Type PT
NTC Thermistor No
Gate-Emitter Voltage-Max 20V
RoHS Status ROHS3 Compliant
Mount Chassis Mount
Mounting Type Chassis Mount
Package / Case E3
Transistor Element Material SILICON
Operating Temperature -40°C~125°C TJ
Packaging Bulk
Published 2011
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 19
Additional Feature UL RECOGNIZED
Subcategory Insulated Gate BIP Transistors
Max Power Dissipation 500W
Terminal Position UPPER
Terminal Form UNSPECIFIED
Pin Count 19
JESD-30 Code R-XUFM-X19
Number of Elements 6
Configuration Three Phase Inverter
Power Dissipation 500W
Case Connection ISOLATED
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Input Standard
Collector Emitter Voltage (VCEO) 2.1V
Max Collector Current 155A
See Relate Datesheet