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MJD31CT4

MJD31CT4 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi


  • Manufacturer: ON Semiconductor
  • Origchip NO: 598-MJD31CT4
  • Package: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Datasheet: PDF
  • Stock: 568
  • Description: MJD31CT4 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi (Kg)

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Details

Tags

Parameters
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Surface Mount YES
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -65°C~150°C TJ
Packaging Cut Tape (CT)
Published 2005
JESD-609 Code e0
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Terminal Finish Tin/Lead (Sn/Pb)
HTS Code 8541.29.00.95
Subcategory Other Transistors
Voltage - Rated DC 100V
Max Power Dissipation 1.56W
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 240
Reach Compliance Code not_compliant
Current Rating 3A
Time@Peak Reflow Temperature-Max (s) 30
Base Part Number MJD31
Pin Count 3
JESD-30 Code R-PSSO-G2
Qualification Status Not Qualified
Number of Elements 1
Voltage 100V
Element Configuration Single
Current 3A
Power Dissipation 15W
Case Connection COLLECTOR
Transistor Application AMPLIFIER
Gain Bandwidth Product 3MHz
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 1.2V
Max Collector Current 3A
DC Current Gain (hFE) (Min) @ Ic, Vce 10 @ 3A 4V
Current - Collector Cutoff (Max) 50μA
Vce Saturation (Max) @ Ib, Ic 1.2V @ 375mA, 3A
Collector Emitter Breakdown Voltage 100V
Transition Frequency 3MHz
Collector Emitter Saturation Voltage 1.2V
Max Breakdown Voltage 80V
Collector Base Voltage (VCBO) 100V
Emitter Base Voltage (VEBO) 5V
hFE Min 25
REACH SVHC No SVHC
RoHS Status Non-RoHS Compliant
Lead Free Lead Free
See Relate Datesheet